Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors
Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors
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DOI：
10.1063/1.1473668
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发表时间：
2002-05
影响因子：
3.2
通讯作者：
Ching‐Wu Wang;Shih-fang Chen;Guan-Ting Chen
中科院分区：
文献类型：
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作者：
Ching‐Wu Wang;Shih-fang Chen;Guan-Ting Chen
对γ射线辐照溅射二氧化钛（TiO2）薄膜的漏电流和可靠性特性进行了系统研究。分析结果表明，在低γ射线剂量[≤10kGy(TiO2)]下提高辐照剂量可以有效改善未辐照TiO2薄膜锐钛矿结构较差的多晶性和较大的漏电流。然而，任何较高的剂量[>10 kGy(TiO2)]都会导致薄膜结晶度的不良恶化，从而导致漏电流增加。 γ射线的最佳剂量[本工作中为10 kGy(TiO2)]不仅可以向TiO2薄膜提供适当的能量转移，而且可以减少氧缺乏和/或Si扩散污染，从而产生优异的结晶度，从而减少漏电流。 E 模型（热化学击穿模型）与时间相关介电击穿数据之间的出色一致性强烈表明，金属氧化物半导体的最佳长期可靠性...
The leakage current and reliability characteristics of γ-ray-irradiated sputtered titanium dioxide (TiO2) thin films have been systematically investigated. Analytical results revealed that the inferior polycrystallinity and the larger leakage current of the anatase structure of unirradiated TiO2 thin film could be effectively improved by raising the irradiation dose at low γ-ray doses [≦10 kGy(TiO2)]. However, any higher dose [>10 kGy(TiO2)] causes undesirable deterioration of the film crystallinity, yielding an increased leakage current. The optimal dose of γ-rays [10 kGy(TiO2) in this work] not only provides a proper energy transfer to the TiO2 film, but also reduces the oxygen deficiency and/or Si-diffusion contamination, resulting in a superior crystallinity, and thus causing the reduced leakage current. The excellent agreement between the E model (thermochemical-breakdown model) and the time-dependent-dielectric-breakdown data suggested strongly that the best long-term reliability of metal–oxide–semi...