Electron beam lithography for high aspect-ratio trench patterning in thick resist: experimental and simulation results
Electron beam lithography for high aspect-ratio trench patterning in thick resist: experimental and simulation results
复制标题
用于厚抗蚀剂中高深宽比沟槽图案化的电子束光刻：实验和模拟结果
DOI：
10.1117/12.656516
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
Xiaoming Yang
中科院分区：
文献类型：
--
作者：
Jianyun Zhou;S. Xiao;W. Scholz;Xiaoming Yang
对更高磁存储密度的驱动相应地推动使薄膜磁记录头的读/写部件的光刻临界尺寸最小化，同时使纵横比最大化。电子束光刻可以为磁头的研究和开发提供足够的分辨率。在这项工作中，我们提出了高纵横比的沟槽图案在1.0-4.0 μm厚的单层CAR抗蚀剂与徕卡VB 6工作在50 keV的实验结果。虽然在厚抗蚀剂中可实现的最大纵横比受到初级电子束在其穿过抗蚀剂朝向抗蚀剂-衬底界面时的前向散射的限制，但是已经通过使用电子束SAFIER收缩工艺实现了具有约20：1的纵横比的亚50 nm隔离的顶部极沟槽结构。为了更好地理解电子束邻近效应对厚抗蚀剂中的抗蚀剂轮廓的影响，已经实施了电子束模拟。通过模拟预测了抗蚀剂轮廓的理论极限。
The drive for higher magnetic storage density is correspondingly pushing to minimize the lithographic critical dimensions of the read/write components of thin film magnetic recording heads while maximizing the aspect ratio. Electron beam lithography can provide adequate resolution for research and development of magnetic heads. In this work, we present the experimental results of high aspect ratio trench patterning in 1.0-4.0 μm thick single-layer CAR resists with Leica VB6 operating at 50 keV. Although the maximum achievable aspect ratio in thick resist is limited by the forward scattering of the primary electron beam as it passes through the resist towards the resist-substrate interface, a sub-50 nm isolated top pole trench structure with an aspect ratio about 20:1 has been achieved by using e-beam SAFIER shrink process. To better understand the electron beam proximity effect on the resist profile in thick resists, electron beam simulation has been implemented. The theoretical limit of resist profiles has been predicted by simulation.