Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure
Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure
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DOI：
10.1021/acs.nanolett.1c01215
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发表时间：
2021-06-24
期刊：
影响因子：
10.8
通讯作者：
Schaibley, John R.
中科院分区：
文献类型：
--
作者：
Shanks, Daniel N.;Mahdikhanysarvejahany, Fateme;Schaibley, John R.
对于基于单个激子和自旋的量子技术，单个激子的确定性放置和控制是一个长期的目标。MoSe 2-WSe 2异质结构具有空间间接层间激子（IX），具有高度可调的能量和独特的自旋谷物理，使其成为量子信息处理的有希望的候选者。先前涉及莫尔超晶格和纳米柱的IX捕获方法不满足确定性放置和能量可调谐性的量子技术要求。在这里，我们使用纳米图案化的石墨烯栅极在MoSe 2-WSe 2异质结构附近产生急剧变化的电场。IX和电场之间的偶极相互作用产生类似于20 nm的陷阱。被捕获的IX显示预测的电场依赖的能量，在低激发功率下的饱和，和增加的寿命，所有的签名强空间限制。所展示的架构是实现单个IX的确定性捕获的关键一步，它在可扩展的量子技术中具有广泛的应用。
For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a longstanding goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) that exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trapping approaches involving moire ' superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2 heterostructure. The dipole interaction between the IX and the electric field creates an similar to 20 nm trap. The trapped IXs show the predicted electric-field-dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step toward the deterministic trapping of single IXs, which has broad applications to scalable quantum technologies.