Role of surrounding oxygen on oxide nanowire growth
Role of surrounding oxygen on oxide nanowire growth
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DOI：
10.1063/1.3474605
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发表时间：
2010-08
影响因子：
4
通讯作者：
A. Klamchuen;T. Yanagida;M. Kanai;K. Nagashima;Keisuke Oka;T. Kawai;Masaru Suzuki;Y. Hidaka;S. Kai
中科院分区：
文献类型：
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作者：
A. Klamchuen;T. Yanagida;M. Kanai;K. Nagashima;Keisuke Oka;T. Kawai;Masaru Suzuki;Y. Hidaka;S. Kai
通过气-液-固（VLS）机制控制氧化物纳米线的能力仍然是探索氧化物纳米线各种应用的重要挑战。在这里，我们展示了VLS生长的SnO 2纳米线周围的氧的关键作用。当周围氧的分压相对低时，氧主要充当氧源，促进VLS生长。而对于相对高的氧分压，出现气-固（VS）生长，抑制纳米线的生长。周围的氧气的VLS和VS生长之间的固有竞争的作用的研究结果是在原则上相当普遍的VLS生长的纳米线的各种氧化物。
The ability to control oxide nanowires via vapor-liquid-solid (VLS) mechanism remains an important challenge to explore various applications of oxide nanowires. Here we demonstrate the crucial roles of surrounding oxygen on VLS grown SnO2 nanowires. When the partial pressure of surrounding oxygen is relatively low, the oxygen mainly acts as an oxygen source, promoting VLS growth. While for relatively high oxygen partial pressures, vapor-solid (VS) growth emerges, suppressing nanowire growth. The findings as to the roles of surrounding oxygen on the inherent competition between VLS and VS growths are in principle rather universal for VLS grown nanowires of various oxides.