High-Field Electrical and Thermal Transport in Suspended Graphene
High-Field Electrical and Thermal Transport in Suspended Graphene
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DOI：
10.1021/nl400197w
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发表时间：
2013-10-01
期刊：
影响因子：
10.8
通讯作者：
Pop, Eric
中科院分区：
文献类型：
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作者：
Dorgan, Vincent E.;Behnam, Ashkan;Pop, Eric
我们研究了悬浮石墨烯器件在高场（Wpm）和高温（>= 1000 K）下的本征输运性质。在15个样品中，我们发现峰值（平均）饱和速度为3.6 × 10（7）cm/s（1.7 × 10（7）cm/s），峰值（平均）热导率为530 W K-1（310 W ICI），在1000 K时。饱和速度为2.4倍，热导率为10-17倍。但在高温下，热导率的变化比石墨中的大，这与二阶三声子散射的影响一致。我们对样品间变化的分析表明，“清洁”器件的行为最接近石墨烯的固有高场特性。这项研究揭示了石墨烯中电荷和热流的关键特征，直到在真空中2230 K下器件击穿，突出了在极端操作条件下仍然未知的问题。
We study the intrinsic transport properties of suspended graphene devices at ''aigh fields Wpm) and high temperatures (>= 1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6 X 10(7) cm/s (1.7 X 107 cm/s) and peak (average) therm:.1 conductivity of 530 W K-1 (310 W ICI) at 1000 K The saturation velocity is 2 4 times and the thermal conductivity 10-17 times greater than in silicon at such elevated temperatures. However, the thermal conductivity shows a steeper di:crease at high temperature than in graphite, consistent.wift, stronger effects of secondorder three-phonon scattering. Our analysis of sample-to-sample variation suggests the behavior of "cleaner" devices most closely approaches the intrinsic high-field properties of graphene. This study reveals key features of charge and heat flow in graphene up to device breakdown at 2230 K in vacuum, highlighting remaining unknown:, under extreme operating conditions.