Systematic prediction of kinetically limited crystal growth morphologies
Systematic prediction of kinetically limited crystal growth morphologies
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DOI：
10.1103/physrevlett.95.155503
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发表时间：
2005-10-07
影响因子：
8.6
通讯作者：
Mitchell, CC
中科院分区：
文献类型：
--
作者：
Du, DX;Srolovitz, DJ;Mitchell, CC
我们开发了一种新的实验和理论相结合的方法来对表面反应动力学控制生长的极限情况做出可靠的预测。我们解决了通过观察金属有机化学气相沉积生长的GaN岛的形态演变来确定生长速度的逆问题，并利用晶体对称性和已有的定理。我们能够预测具有刻面和曲面特征的凸面和凹面的增长。我们还给出了从实验观测中推断生长速度的一般准则。
We develop a new, combined experimental and theoretical approach to make reliable predictions for the limiting case of surface reaction kinetics controlled growth. We solve the inverse problem of determining the growth velocity from observations of the evolution of the morphology of GaN islands grown by metalorganic chemical vapor deposition and make use of crystal symmetry and established theorems. We are able to predict the growth for both convex and concave surfaces, with faceted and curved features. We also give a general guideline for deducing growth velocities from experimental observations.