Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells
Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells
复制标题
TMAH和KOH制备硅太阳能电池倒金字塔的刻蚀特性差异
DOI：
10.1016/j.apsusc.2012.10.117
复制
发表时间：
2013-01-01
影响因子：
6.7
通讯作者：
Hu, Shaoxu
中科院分区：
文献类型：
--
作者：
Fan, Yujie;Han, Peide;Hu, Shaoxu
用四甲基氢氧化铵(TMAH)和氢氧化钾(KOH)在不同的腐蚀液浓度和温度下，在(10 0)硅片上进行了一系列制备倒金字塔硅太阳电池的对比腐蚀实验。实验结果表明，TMAH溶液具有比KOH溶液更高的刻蚀速率和更低的(1 0 0)面刻蚀速率，其(1 1 1)/(10 0)刻蚀速率比是KOH溶液的2~3倍。此外，二氧化硅掩模的刻蚀速率在TMAH中比在KOH中低一个数量级。此外，表面形貌分析表明，TMAH刻蚀可以获得比KOH刻蚀更高质量的顶尖锐利、侧壁光滑(111)、表面无污染的倒金字塔，从而使TMAH刻蚀样品具有更好的减反射性能。最后，得到了倒锥体表面涂覆SiO_2反射膜的TMAH刻蚀样品的最低反射率为1.8%。因此，研究表明，TMAH比KOH更适合制备倒金字塔。(C)2012爱思唯尔B.V.保留所有权利。
In this paper, a series of comparative etching experiments on preparing inverted pyramids of silicon solar cells have been carried out using tetramethyl ammonium hydroxide (TMAH) and potassium hydroxide (KOH) at different etchant concentrations and temperatures on a patterned (1 0 0) Si. These experiment results show that TMAH solution has higher undercut rate and lower (1 0 0) plane etch rate than KOH solution, and the (1 1 1)/(1 0 0) etch rate ratio of TMAH is two to three times that of KOH solution. Additionally, etch rate of SiO2 mask is an order of magnitude lower in TMAH than in KOH. Besides, surface morphology analysis indicates that TMAH etching can obtain much higher quality inverted pyramids of sharp vertex, smooth (1 1 1) sidewall and uncontaminated surface than KOH etching, which makes TMAH etching samples show better antireflection properties. Finally, the minimum reflectivity of TMAH etching sample low as 1.8% is obtained for inverted pyramids covered with SiO2 reflectivity coating. So the study reveals that TMAH is more attractive for the preparation of inverted pyramids than KOH. (C) 2012 Elsevier B. V. All rights reserved.