Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper.
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper.
复制标题
DOI：
10.1364/oe.19.00a956
复制
发表时间：
2011-07
期刊：
影响因子：
3.8
通讯作者：
K. Lau;K. Wong;Xinbo Zou;Peng-Ren Chen
中科院分区：
文献类型：
--
作者：
K. Lau;K. Wong;Xinbo Zou;Peng-Ren Chen
利用成熟的硅集成电路技术，硅上的LED为固态照明和显示器的低成本制造提供了极大的潜力。在这篇文章中，我们报告了如何提高硅上生长的LED的性能。在图案化硅衬底上生长了多量子阱InGaN LED结构，并制作了半径为160µm的圆形LED。然后将所制造的LED转移到带有反射镜的电镀铜衬底上，通过双反转转移工艺来提高光提取效率和散热。转移后铜基LED的光输出功率提高了约80%。由于铜具有良好的导热性能，光输出功率饱和前的工作电流也增加了25%。在注入电流为20 mA时，铜基封装LED的光输出功率为6.5 mW，在55 mA的驱动下，光输出功率高达14 mW。
LEDs on Si offer excellent potential of low cost manufacturing for solid state lighting and display, taking advantage of the well-developed IC technologies of silicon. In this paper, we report how the performance of LEDs grown on Si can be improved. Multiple quantum well InGaN LED structure was grown on patterned silicon substrates and circular LEDs 160 µm in radius were processed. Fabricated LEDs were then transferred to an electroplated copper substrate with a reflective mirror inserted by a double-flip transfer process, to improve the light extraction efficiency and heat dissipation. The light output power of LEDs on copper increased by ~80% after the transfer. The operating current before the onset of light output power saturation also increased by 25% because of the good thermal conductivity of copper. The light output power of packaged LEDs on copper was 6.5 mW under 20 mA current injection and as high as 14 mW driven at 55 mA.