Origin of stresses in sputtered elemental and alloy thin films
Origin of stresses in sputtered elemental and alloy thin films
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溅射元素和合金薄膜中的应力来源
DOI：
10.1116/1.580042
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
R. Somekh
中科院分区：
文献类型：
--
作者：
C. Hudson;R. Somekh
溅射薄膜的性能很大程度上受沉积条件的影响。在本文中，我们试图了解与溅射工艺相关的许多参数组合在一起的方式，从而仅给出最终决定薄膜特性的几个参数。我们特别考虑薄膜中的应力，并考虑生产具有中性应力的薄膜所需的条件，这是常规生产中制造的薄膜经常需要的状态。显然，溅射气压和基底-靶材距离的乘积是控制薄膜应力的主要因素，但溅射电压和基底温度也具有相关性。使用可变的氩气压力和基底-靶材距离，在低功率下研究了许多元素和合金薄膜，因此沉积温度约为 20–40°C。详细分析表明，粒子轰击薄膜的总能量通量模型...
The properties of a sputtered film are strongly influenced by the deposition conditions. In this article we try to develop an understanding of the way in which the many parameters associated with sputtering process combine together to give only a few parameters which ultimately determine the film properties. In particular we consider the stresses in films and consider the conditions required to produce films with neutral stress, a state often required in films made in routine production. It is apparent that the product of the sputtering gas pressure and the substrate–target distance is a major factor in controlling the film stress, but also of relevance are the sputtering voltage and the substrate temperature. Many elemental and alloy films have been investigated, using variable argon pressures and substrate–target distances, at a low power and therefore a deposition temperature of approximately 20–40 °C. Detailed analyses have shown that a model of the total energy flux of particles bombarding the film i...