p-type ZnO thin films formed by CVD reaction of diethylzinc and NO gas
p-type ZnO thin films formed by CVD reaction of diethylzinc and NO gas
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DOI：
10.1149/1.1554292
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发表时间：
2003-04-01
影响因子：
--
通讯作者：
Coutts, TJ
中科院分区：
文献类型：
--
作者：
Li, X;Yan, Y;Coutts, TJ
我们讨论了使用一氧化氮（NO）气体掺杂ZnO p型薄膜，使用金属有机化学气相沉积（CVD）反应的Zn金属有机前驱体和NO气体。在该反应中，使用NO气体来供应O和N以形成N掺杂ZnO（ZnO：N）膜。俄歇电子能谱分析表明，在富锌条件下，薄膜中的氮浓度很容易检测到，最高浓度接近3原子%。对于大于2原子%的浓度，膜是p型的。载流子浓度从1.0 × 10（15）到1.0 × 10（18）cm（-3）变化，迁移率约为10（-1）cm（2）V-1 s（-1）。最小薄膜电阻率达到20 Ω cm。(C)2003年电化学学会。
We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being similar to3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 x 10(15) to 1.0 x 10(18) cm(-3) and the mobility is approximately 10(-1) cm(2) V-1 s(-1). The minimum film resistivity achieved is similar to20 Omega cm. (C) 2003 The Electrochemical Society.