Ultimate bending strength of Si nanowires.
Ultimate bending strength of Si nanowires.
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DOI：
10.1021/nl300957a
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发表时间：
2012-04
期刊：
影响因子：
10.8
通讯作者：
Gheorghe Stan;S. Krylyuk;Albert V. Davydov;Igor Levin;Robert F. Cook
中科院分区：
文献类型：
--
作者：
Gheorghe Stan;S. Krylyuk;Albert V. Davydov;Igor Levin;Robert F. Cook
材料理想强度的测试平台由几乎没有缺陷的纳米结构（例如纳米线、纳米管、纳米颗粒）提供。本文研究了半径在20 ~ 60nm范围内的硅纳米线的极限弯曲强度。通过顺序原子力显微镜操作，简单地粘附在平面基底上的纳米线被弯曲。详细分析了破坏前的弯曲状态，测量了所研究纳米线的弯曲动力学和极限断裂强度。当纳米线半径从60 nm减小到20 nm时，断裂强度从12 GPa增加到18 GPa。这些纳米线的断裂强度值大，虽然与硅的理想强度相当，但可以从纳米线的表面形貌来解释。
Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this work, the ultimate bending strengths of Si nanowires with radii in the 20-60 nm range were investigated by using a new bending protocol. Nanowires simply held by adhesion on flat substrates were bent through sequential atomic force microscopy manipulations. The bending states prior to failure were analyzed in great detail to measure the bending dynamics and the ultimate fracture strength of the investigated nanowires. An increase in the fracture strengths from 12 to 18 GPa was observed as the radius of nanowires was decreased from 60 to 20 nm. The large values of the fracture strength of these nanowires, although comparable with the ideal strength of Si, are explained in terms of the surface morphology of the nanowires.