Influence of oxygen and nitrogen addition during growth of CVD diamond on pure cobalt substrates

Influence of oxygen and nitrogen addition during growth of CVD diamond on pure cobalt substrates
复制标题

DOI:
10.1016/j.diamond.2005.09.015
复制
发表时间:
2006-04-01
影响因子:
4.1
通讯作者:
Pereira, E.
Pereira, E.
中科院分区:
材料科学2区
文献类型:
--
作者:
Neto, M. A.;Pereira, E.

文献摘要

被引文献

相似文献

结果表明,在MPCVD反应器中,使用普通的氢气和甲烷流,可以直接在纯钴衬底上形成独立的金刚石薄膜。这些薄膜的低附着力特性可以通过在衬底和薄膜之间形成石墨化层来解释。扫描电子显微镜分析显示薄膜晶界有特殊区域,随后经能谱仪鉴定为钴夹杂物。在本工作中,我们研究了氧和氮的添加对薄膜生长形态的影响。再次,采用扫描电子显微镜和能谱仪分别对薄膜的生长形貌和钴含量进行了表征。我们的结果清楚地表明,在金刚石成核的初始阶段,氧气的添加阻止了钴向薄膜中的扩散。此外,我们认为这种效应可能是由于在薄膜和衬底之间形成了一层钴氧化层。此外,在成核或生长过程中添加氮气和氧气会导致薄膜生长速度的增加。检测到具有清晰的八面体小面的(111)择优表面形貌和以(100)晶面为主的薄膜。提出了在钴衬底上添加氧气和氮气的CVD金刚石生长模型。(C)2005 Elsevier B.V.所有紧身衣均已保留。
It was shown that in MPCVD reactors the use of common H and CH4 flows, can lead to the formation of free-standing diamond films directly on pure cobalt substrates. The characteristic low adhesion of these films can be explained by the formation of a graphitic layer between the substrate and the film. Scanning electron microscopy analysis shows special areas at the film grain boundaries that were subsequently identified as cobalt inclusions by EDS.In this work we have studied the influence of oxygen and nitrogen addition on the film's growth morphology. Once again SEM and EDS were used to access respectively the films growth morphology and cobalt content. Our results clearly indicate that the addition of oxygen during the initial stages of diamond nucleation prevents diffusion of cobalt into the film. Further, we believed that this effect is likely due to the formation of a cobalt-oxide layer between the film and the substrate. Also, the addition of nitrogen and oxygen the later during nucleation or during growth leads to an increase in the film's growth rate. A preferential (111) surface morphology with clear octahedron facets and films with dominant (100) crystallographic planes are detected. A model is presented for the growth of CVD diamond on cobalt substrates with the addition of oxygen and nitrogen. (c) 2005 Elsevier B.V. All tights reserved.