Superconductivity-related insulating behavior
Superconductivity-related insulating behavior
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DOI：
10.1103/physrevlett.92.107005
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发表时间：
2004-03-12
影响因子：
8.6
通讯作者：
Shahar, D
中科院分区：
文献类型：
--
作者：
Sambandamurthy, G;Engel, LW;Shahar, D
我们提出了超导，无序，无定形氧化铟薄膜的实验研究结果。这些薄膜可以通过施加垂直磁场从超导相驱动到可重入的绝缘状态(B)。我们发现高b绝缘体表现出具有特征温度T-I的活化输运。T-I的最大值（T-I(p)）接近于B=0时的超导转变温度（T-c），这表明超导相和绝缘相的传导机制之间可能存在联系。T-I(p)和T-c对障碍强度的依赖性相反。
We present the results of an experimental study of superconducting, disordered, thin films of amorphous indium oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field (B). We find that the high-B insulator exhibits activated transport with a characteristic temperature, T-I. T-I has a maximum value (T-I(p)) that is close to the superconducting transition temperature (T-c) at B=0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. T-I(p) and T-c display opposite dependences on the disorder strength.