Simulation of an $$n^{+}\hbox {-}n\hbox {-}n^{+}$$n+-n-n+ Diode by Using Globally-Hyperbolically-Closed High-Order Moment Models
Simulation of an $$n^{+}\hbox {-}n\hbox {-}n^{+}$$n+-n-n+ Diode by Using Globally-Hyperbolically-Closed High-Order Moment Models
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DOI：
10.1007/s10915-013-9781-1
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发表时间：
2014-06
影响因子：
2.5
通讯作者：
Zhicheng Hu;Ruo Li;Tiao Lu;Yanli Wang;Wenqi Yao
中科院分区：
文献类型：
--
作者：
Zhicheng Hu;Ruo Li;Tiao Lu;Yanli Wang;Wenqi Yao
通过玻尔兹曼输运方程的矩封闭，蔡等人推导出了电子输运的扩展流体动力学模型(J Math Phys 53：103503,2012年)。根据Li等人(2012)最近发展的数值格式，证明了所导出的扩展流体力学模型能够捕捉到动力学方程解的主要特征。作为所提出的模型和数值格式的应用，本文通过求解由Boltzmann-Poisson方程导出的力矩系统，对结构中的载流子输运进行了数值模拟。在不增加任何直接求解动力学方程的经验参数的情况下，用扩展的流体动力学模型得到的数值结果与动力学方程的解非常吻合，即使在通道长度为50 nm的情况下也是如此。
By the moment closure of the Boltzmann transport equation, the extended hydrodynamic models for electron transport have been derived in Cai et al. (J Math Phys 53:103503, 2012). With the numerical scheme developed in Li et al. (2012) recently, it has been demonstrated that the derived extended hydrodynamic models can capture the major features of the solution of kinetic equations. As the application of the models and the numerical scheme proposed therein, we in this paper carry out the numerical simulation to investigate the carrier transport in--structures by solving the moment system derived from the Boltzmann–Poisson equations. Without any additional empirical parameters than that used in directly solving the kinetic equations, we obtain numerical results by the extended hydrodynamic models with very satisfied agreement with the solution of the kinetic equations, even in case that the length of the channel is as short as 50 nm.