Quantum Hall Spin Diode
Quantum Hall Spin Diode
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DOI：
10.1103/physrevlett.118.186801
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发表时间：
2017-05-04
影响因子：
8.6
通讯作者：
West, K. W.
中科院分区：
文献类型：
--
作者：
Eisenstein, J. P.;Pfeiffer, L. N.;West, K. W.
利用高垂直磁场下的双层二维电子系统实现磁性隧道结，其中两层中费米能级上的电子具有平行或反平行的自旋磁化。在反平行的情况下，隧道结，在低温下，表现为一个近乎理想的自旋二极管。在升高的温度下，二极管特性随着长波长自旋波被热激发而退化。这些隧道结提供了一个示范，在填充因子nu = 5/2和7/2的N = 1的朗道水平的电子的自旋极化基本上是完整的，并在平面内的磁场分量的帮助下，在这些填充因子的朗道水平混合是弱的样品中研究。
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the N = 1 Landau level at filling factors nu = 5/2 and 7/2 is essentially complete, and, with the aid of an in-plane magnetic field component, that Landau level mixing at these filling factors is weak in the samples studied.