Thermoelectric properties of Sn-doped TiCoSb half-Heusler compounds
Thermoelectric properties of Sn-doped TiCoSb half-Heusler compounds
复制标题
DOI：
10.1016/j.jallcom.2005.06.036
复制
发表时间：
2006-01
影响因子：
6.2
通讯作者：
T. Sekimoto;K. Kurosaki;H. Muta;S. Yamanaka
中科院分区：
文献类型：
--
作者：
T. Sekimoto;K. Kurosaki;H. Muta;S. Yamanaka
制备了掺锡TiCoSb的半heusler化合物“TiCoSnxSb1−x（x=0.0, 0.01和0.05）”，并在室温下测量了它们的热电性能。EDX分析表明，所有样品都有三个相：TiCoSnxSb1−x、Co-rich和Ti-rich相。随着Sn的掺杂，热电功率增大，TiCoSn0.05Sb0.95样品的热电功率为正。热导率随温度的升高和锡含量的增加而降低。在TiCoSn0.05Sb0.95样品中，p型材料在988K时ZT最大值为0.030。
Half-Heusler compounds of Sn-doped TiCoSb “TiCoSnxSb1−x(x=0.0, 0.01, and 0.05)” were prepared and their thermoelectric properties were measured above room temperature. From the EDX analysis, all the samples have three phases: the TiCoSnxSb1−x, Co-rich, and Ti-rich phases. The values of the thermoelectric power increase with Sn doping, and a positive thermoelectric power is obtained in the sample of TiCoSn0.05Sb0.95. The thermal conductivity decreases both with increasing temperature and with Sn content. The maximum value of ZT for p-type material is 0.030 at 988K in the sample of TiCoSn0.05Sb0.95.