Linear and quadratic magnetoresistance in the semimetal SiP2
Linear and quadratic magnetoresistance in the semimetal SiP2
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DOI：
10.1103/physrevb.102.115145
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发表时间：
2020-02
影响因子：
3.7
通讯作者：
Yuxing Zhou;Zhefeng Lou;ShengNan Zhang;Huancheng Chen;Qin Chen;Binjie Xu;Jianhua Du;Jinhu Yang-Jin
中科院分区：
文献类型：
--
作者：
Yuxing Zhou;Zhefeng Lou;ShengNan Zhang;Huancheng Chen;Qin Chen;Binjie Xu;Jianhua Du;Jinhu Yang-Jin
理论上已经提出了在许多拓扑非平凡/平凡半金属中发现的极大磁阻（XMR）的多种机制，但实验上还不清楚哪种机制在特定样品中是负责的。本文结合能带结构计算、磁电阻（MR）、霍尔电阻率（Hall resistance）的数值模拟和deHaas-van Alphen（dHvA）振荡测量，研究了$Si {P}} 2 $的MR各向异性.有人发现，作为磁场$H$施加沿着的$a$轴，MR表现出不饱和的近线性的$H$的依赖性，这被认为是从不完全的载流子补偿。对于$H\ensuremath{\parallel}[101]$取向，观察到了近二次的$H$非饱和依赖关系，其电阻率高达$5.88\ifmmode\times\else\texttimes\fi{}{10}^{4}%$（1.8 K，31.2 T），并且观察到了场诱导的电阻率上弯行为，这可能是由于存在沿沿着${k}_{x}$方向延伸的空穴开放轨道。实验结果与基于费米面（FS）计算的模拟结果吻合较好，表明FS的拓扑结构对其MR起着重要作用。
Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this paper, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity, and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of $\mathrm{Si}{\mathrm{P}}_{2}$ which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field $H$ is applied along the $a$ axis, the MR exhibits an unsaturated nearly linear $H$ dependence, which was argued to arise from incomplete carriers compensation. For the $H\ensuremath{\parallel}[101]$ orientation, an unsaturated nearly quadratic $H$ dependence of MR up to $5.88\ifmmode\times\else\texttimes\fi{}{10}^{4}%$ (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the ${k}_{x}$ direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.