Crystal growth and optical properties of a Ce2Si2O7 single crystal
Crystal growth and optical properties of a Ce2Si2O7 single crystal
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DOI：
10.1016/j.optmat.2020.110210
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发表时间：
2020-11
影响因子：
3.9
通讯作者：
Takahiko Horiai;S. Kurosawa;R. Murakami;Y. Shoji;J. Pejchal;M. Yoshino;A. Yamaji;Hiroki Sato;Y. Ohashi;K. Kamada;Y. Yokota;A. Yoshikawa
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文献类型：
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作者：
Takahiko Horiai;S. Kurosawa;R. Murakami;Y. Shoji;J. Pejchal;M. Yoshino;A. Yamaji;Hiroki Sato;Y. Ohashi;K. Kamada;Y. Yokota;A. Yoshikawa
以Ce为发光中心的闪烁体被广泛用于辐射探测。在这项研究中，我们重点研究了ce2si2o7焦硅酸盐闪烁体，并评估了它的光学和闪烁性能。从ce2si2o7在激发到Ce3+4f-5d1转变时的量子产率的温度依赖性结果可以看出，在300℃时ce2si2o7的量子产率约为室温时的40%。此外，ce2si2o7在室温下具有9400±800光子/MeV的光输出和快的衰减时间（~34 ns），因此在辐射探测方面具有潜在的应用前景。
The scintillators with Ce luminescent centers are widely used for radiation detection. In this study, we focused on the Ce2Si2O7pyrosilicate scintillator and evaluated its optical and scintillation properties. From the result of the temperature dependence of quantum yield of Ce2Si2O7under excitation into the Ce3+4f-5d1transition, it was revealed that at 300°C the Ce2Si2O7had a quantum yield of approximately 40% of that at the room. In addition, Ce2Si2O7had a light output of 9,400 ± 800 photons/MeV and fast decay time (~34 ns) at room temperature, and therefore, it has potential for application in radiation detection.