Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
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DOI：
10.1109/ted.2020.2972979
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发表时间：
2020-04-01
影响因子：
3.1
通讯作者：
Koide, Yasuo
中科院分区：
文献类型：
--
作者：
Liu, Jiangwei;Teraji, Tokuyuki;Koide, Yasuo
在本文中，我们报道了掺硼金刚石（b -金刚石）肖特基二极管和mesfet的制备和表征。研究了573 ~ 973 K退火对这些器件电性能的影响。在-10.0 V的栅极电压下，制造的肖特基二极管的最大电流密度为0.05 A/cm(2)。在673和973 K退火时，其强度先增大到0.70 A/cm(2)，后减小到0.07 A/cm(2)。制造的b -金刚石肖特基二极管的开/关比在关闭电压（V-OFF）为0 V时超过4.5 × 10(8)，在V-OFF = 42.0 V时超过3.2 × 10(6)。对于退火肖特基二极管，在V-OFF < 6.0 V时，ON/OFF比高于1.7x10(6)。b -金刚石沟道层上Au/Pt双层栅极的理想因子和势垒高度分别为1.05 ~ 1.78 eV和1.24 ~ 1.56 eV。栅极长度分别为12.0、7.0和4.3 μ m的三种b -金刚石mesfet均具有p型沟道特性。制造的mesfet的漏极电流最大值为-0.11,-0.16和-0.39 mA/mm。在773 K退火后，这些值增加到-0.17,-0.24和-0.55 mA/ mm。773 K退火也使三个mesfet的外在跨导最大值分别从11.1,11.0和10.4 μ S/mm增加到18.6,16.2和14.4 μ S/mm。
In this article, we report the fabrication and characterization of boron-doped diamond (B-diamond) Schottky diodes and MESFETs. Effects of annealing at 573-973 K on the electrical properties of these devices are investigated. Current densitymaximumfor the as-fabricated Schottky diode is 0.05 A/cm(2) at a gate voltage of -10.0 V. Annealing at 673 and 973 K makes it increase first to 0.70 A/cm(2) and decrease lately to 0.07 A/cm(2), respectively. ON/OFF ratios for the as-fabricated B-diamond Schottky diode exceed 4.5x10(8) at the OFF-voltage (V-OFF) of 0 V and 3.2 x 10(6) at V-OFF = 42.0 V. For the annealed Schottky diode, the ON/OFF ratios are higher than 1.7x10(6) at V-OFF < 6.0 V. Ideality factor and barrier height for Au/Pt bilayer gates on the B-diamond channel layer range from 1.05 to 1.78 and from 1.24 to 1.56 eV, respectively. All three B-diamond MESFETs with the gate lengths of 12.0, 7.0, and 4.3 mu m, respectively, operate with p-type channel characteristics. The drain current maxima for the as-fabricated MESFETs are -0.11, -0.16, and -0.39 mA/mm. After annealing at 773 K, these values increase to -0.17, -0.24, and -0.55 mA/ mm. Annealing at 773 K also increases the extrinsic transconductance maxima for the three MESFETs from 11.1, 11.0, and 10.4 mu S/mm to 18.6, 16.2, and 14.4 mu S/mm, respectively.