Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning
Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning
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DOI：
10.1063/5.0045817
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发表时间：
2021-04-05
影响因子：
4
通讯作者：
Hopkinson, Mark
中科院分区：
文献类型：
--
作者：
Han, Im Sik;Wang, Yun-Ran;Hopkinson, Mark
报道了采用液滴外延技术，利用直接激光干涉图案化技术，制备了高度有序的GaAsAlGaAs型量子点阵列。在光脉冲作用下的热梯度作用下，由于表面的局域扩散作用，在纳米岛结构的AlGaAs表面上形成了周期接近300 nm的二维Ga液滴阵列。在砷熔剂下晶化后，得到了精确有序的单点阵列。通过仔细选择成核和液滴形成的参数，可以优化有序的GaAs量子点的尺寸分布和光学性质。
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of Ga droplets with a periodicity of similar to 300nm are initially formed on nanoisland structured AlGaAs surfaces due to the localized surface diffusion under the influence of a thermal gradient imposed by the light pulse. After crystallization under an arsenic flux, precisely ordered arrays of GaAs single dots are obtained. The size distribution and optical properties of the ordered GaAs QDs are shown to be optimized by the careful choice of parameters for nucleation and droplet formation.