Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory
Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory
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DOI：
10.1063/1.4944413
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发表时间：
2016-03
影响因子：
4
通讯作者：
Kouhei Kimura;K. Ohmi;S. Kishida;K. Kinoshita
中科院分区：
文献类型：
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作者：
Kouhei Kimura;K. Ohmi;S. Kishida;K. Kinoshita
随着存储器装置的密度增加，由宇宙射线产生软错误的问题变得越来越严重。因此，电阻随机存取存储器（ReRAM）的抗宇宙辐射性能必须得到阐明，以供实际使用。本文研究了Pt/NiO/ITO结构ReRAM在紫外光照射下的数据保持特性。软错误被证实是由紫外线照射在低电阻和高电阻状态。光照射对数据保持特性的波长依赖性的分析表明，从价电子激发到导带和由于引入氧空位而产生的能级引起的误差。根据统计估计的软误差率，认为这些误差是由紫外光辐照产生的电子空穴对和原子价态变化引起的氧空位的内聚和分散引起的。
With increasing density of memory devices, the issue of generating soft errors by cosmic rays is becoming more and more serious. Therefore, the irradiation resistance of resistance random access memory (ReRAM) to cosmic radiation has to be elucidated for practical use. In this paper, we investigated the data retention characteristics of ReRAM against ultraviolet irradiation with a Pt/NiO/ITO structure. Soft errors were confirmed to be caused by ultraviolet irradiation in both low- and high-resistance states. An analysis of the wavelength dependence of light irradiation on data retention characteristics suggested that electronic excitation from the valence to the conduction band and to the energy level generated due to the introduction of oxygen vacancies caused the errors. Based on a statistically estimated soft error rates, the errors were suggested to be caused by the cohesion and dispersion of oxygen vacancies owing to the generation of electron-hole pairs and valence changes by the ultraviolet irradia...