Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate
Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate
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DOI：
10.1149/2.0121506jss
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发表时间：
2015-01-01
影响因子：
2.2
通讯作者：
Ono, Kouichi
中科院分区：
文献类型：
--
作者：
Nakakubo, Yoshinori;Eriguchi, Koji;Ono, Kouichi
等离子体诱导的Si衬底损伤的表征表明，使用定制的纳米尺度分析的电容-电压（C-V）技术。将低电阻Si晶片暴露于电感耦合等离子体（ICP）或电容耦合等离子体（CCP）。我们专注于等离子体参数和湿法刻蚀工艺对等离子体诱导的物理损伤（PPD）分析的影响。表面和界面层的光学厚度（d（SL）和d（IL））的特征在于使用光谱椭圆偏振法（SE）和比较的电氧化物厚度（EOT）通过C-V技术获得。在损伤样品的情况下，发现SE的光学厚度d（SL）小于C-V技术的EOT，而d（SL）和d（IL）的总和近似等于EOT。采用稀释氢氟酸（DHF）湿法蚀刻步骤来解决损伤样品中缺陷密度的深度分布。我们确定的潜在缺陷密度，d（SL），和d（IL）DHF湿蚀刻后，这是不可或缺的实际设备的性能设计。结果表明，尽管CCP损伤样品的入射离子平均能量（（E）over bar（ion））较大，但即使经过湿法腐蚀，CCP损伤样品的潜在缺陷密度仍小于ICP损伤样品。这一发现与先前的图片形成鲜明对比--较大的（E）过bar（ion）导致较厚的损伤层和较大的潜在缺陷密度。我们提出了一个模型，这些相互矛盾的结果，其中的档案的缺陷密度和灵敏度的每一种分析技术都考虑在内。本工作强调了使用C-V技术进行纳米级损伤表征的重要性，可以了解潜在缺陷的影响，并能够更好地设计未来的电子设备。(C)作者（S）2015由ECS发布。这是一篇开放获取的文章，根据知识共享署名非商业性禁止衍生4.0许可证（CC BY-NC-ND，http：//creativecommons.org/licenses/by-nc-nd/4.0/）的条款分发，该许可证允许在任何媒体上进行非商业性的重用，分发和复制，前提是原始作品没有以任何方式改变并正确引用。如需商业再利用许可，请发送电子邮件至oa@electrochem.org。保留所有权利。
Characterization of plasma-induced Si substrate damage is demonstrated using an electrical capacitance-voltage (C-V) technique customized for the nano-scale analysis. Low resistive Si wafers are exposed to an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP). We focus on the effects of plasma parameters and wet-etching processes on plasma-induced physical damage (PPD) analyses. The optical thicknesses of surface and interfacial layers (d(SL) and d(IL)) were characterized using spectroscopic ellipsometry (SE) and compared with the electrical oxide thicknesses (EOT) obtained by the C-V technique. In the case of as-damaged samples, the optical thickness d(SL) by SE is found to be smaller than the EOT by the C-V technique, while the sum of d(SL) and d(IL) was approximately equal to the EOT. A diluted hydrofluoric acid (DHF) wet-etch step is employed to address depth profile of defect density in damaged samples. We identify the latent defect density, d(SL), and d(IL) after the DHF wet-etch, which are indispensible for practical device performance designs. It is found that, although the average energy of incident ions ((E) over bar (ion)) is larger for the case of CCP, the latent defect density of CCP-damaged samples is smaller than that of ICP even after the wet-etching. This finding is in sharp contrast to previous pictures-the larger (E) over bar (ion) leads to the thicker damaged layer and the larger latent defect density. We propose a model for these conflicting results, where the profiles of defect density and the sensitivities of each analysis technique are taken into account. The present work highlights the importance of the nano-scale damage characterization using the C-V technique, allowing to understand the influence of latent defects and to enable better design of future electronic devices. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. All rights reserved.