An improved GaAs transmission photocathode
An improved GaAs transmission photocathode
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DOI：
10.1088/0022-3727/5/10/101
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发表时间：
1972-10
期刊：
影响因子：
--
通讯作者：
M. Allenson;P. King;M. C. Rowland;G. Steward;C. Syms
中科院分区：
文献类型：
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作者：
M. Allenson;P. King;M. C. Rowland;G. Steward;C. Syms
GaAs 透射光电阴极使用 Ga1−xAlxAs 中间层在 GaP 衬底上生长，以减少晶格失配对光电阴极性能的影响。对于电子扩散长度约为 2 μm 且光电阴极-基底界面复合速度为 103 m s-1 或更小的光电阴极，测量到高达 400 μA lm−1 的传输灵敏度。
GaAs transmission photocathodes have been grown on GaP substrates using an intermediate layer of Ga1−xAlxAs to reduce the effects of lattice mismatch on the photocathode performance. Transmission sensitivities up to 400 μA lm−1 have been measured for these photocathodes which have electron diffusion lengths of about 2 μm and photocathode-substrate interface recombination velocities of 103 m s−1 and less.