Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor
Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor
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DOI：
10.1021/cm100900k
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发表时间：
2011-04-12
影响因子：
8.6
通讯作者：
Hwang, Cheol Seong
中科院分区：
文献类型：
--
作者：
Park, Tae Joo;Kim, Jeong Hwan;Hwang, Cheol Seong
提出了一种新的原子层沉积（ALD）饱和HfO2薄膜生长行为模型。随着前体输入的增加，观察到生长速率的众所周知的ALD饱和，但完全饱和需要极长的进料时间。在生长速率随着前体进料时间的增加而快速增加之后，观察到伪饱和区域，其中完全饱和受到物理吸附的前体分子或副产物分子对化学吸附物质的“屏蔽效应”的阻碍。物理吸附的前体分子筛选以下前体的活性吸附位点。本研究中提出的改进工艺配方，即离散进料法，提供了改进的薄膜生长行为和电学性能。
A new model for the growth behavior of saturated HfO2 films by atomic layer deposition (ALD) was suggested. The well-known ALD saturation of the growth rate with increasing precursor input was observed, but the full saturation required an extremely long feeding time. After the rapid increase in growth rate with increasing precursor feeding time, a pseudo-saturation region was observed where full saturation was hindered by the "screening effect" of the physisorbed precursor molecules or byproduct molecules on the chemisorbed species. The physisorbed precursor molecules screen the active adsorption sites for the following precursor. The discrete feeding method, which is the modified process recipe suggested in this study, provided improved growth behavior and electrical properties of the film.