Surface etching kinetics of hydrogen plasma on InP
Surface etching kinetics of hydrogen plasma on InP
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InP 上氢等离子体的表面刻蚀动力学
DOI：
10.1063/1.93296
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发表时间：
1982
影响因子：
4
通讯作者：
A. Schlier
中科院分区：
文献类型：
--
作者：
C. Tu;R. Chang;A. Schlier
用俄歇电子能谱研究了氢等离子体在InP上的表面刻蚀动力学。结果表明，用低功率密度(15 mW cm−3)的氢等离子体可以去除表面的烃类污染。在较高功率下，磷优先被氢原子以氢化物的形式除去，留下表面丰富的In。过量的In在高本底压力(∼10−6 Torr)下被残余水蒸气氧化。然而，在较低的基压(≲10−7 Torr)下，自然氧化物(∼10 A)可以被蚀刻掉。
The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm−3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10−6 Torr) by residual water vapor. However, at low base pressure (≲10−7 Torr) the native oxide (∼10 A) can be etched away.