THERMAL RESISTANCE DUE TO POINT DEFECTS AT HIGH TEMPERATURES
THERMAL RESISTANCE DUE TO POINT DEFECTS AT HIGH TEMPERATURES
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DOI：
10.1103/physrev.119.507
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发表时间：
1960-01-01
期刊：
影响因子：
--
通讯作者：
KLEMENS, PG
中科院分区：
文献类型：
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作者：
KLEMENS, PG
当点缺陷对声子的散射比umklapp过程强时，得到了高温下晶格热导率的表达式。后者限制了声子在低频率下的平均自由程，并且大部分热量在点缺陷和umklapp平均自由程相等的频率下传输。电导率随（AT）-1 2变化，其中A与点缺陷散射的强度成比例，T是温度。该理论与Steele和Rosi测量的Ge-Si合金的热导率大致一致。
An expression is obtained for the lattice thermal conductivity at high temperatures in the limit when the scattering of phonons by point defects is stronger than by umklapp processes. The latter limit the phonon mean free path at low frequencies and most of the heat is transported at frequencies such that the point defect and umklapp mean free paths are equal. The conductivity varies as (AT)− 1 2, where A is proportional to the strength of the point defect scattering, T is the temperature. The theory is in rough agreement with the thermal conductivity of Ge-Si alloys, measured by Steele and Rosi.