Piezotronic Tuning of Potential Barriers in ZnO Bicrystals
Piezotronic Tuning of Potential Barriers in ZnO Bicrystals
复制标题
DOI：
10.1002/adma.201705573
复制
发表时间：
2018-03-08
影响因子：
29.4
通讯作者：
Roedel, Juergen
中科院分区：
文献类型：
--
作者：
Keil, Peter;Trapp, Maximilian;Roedel, Juergen
磁性、铁电性或压电性的耦合与氧化物界面上的电荷输运提供了彻底改变经典电子学的选择。本文报道了应力致压电极化对ZnO双晶界面静电势垒的调制。通过外延固态转换的试样设计允许在半导体-半导体界面上实现最佳偏振矢量对准和缺陷状态的剪裁。这两个量都是通过透射电子显微镜来探测的。因此，单轴压应力使压电极化矢量头对头取向界面的势垒高度完全降低，而尾对尾取向界面的势垒高度增加。机械输入和电传输之间的这种耦合的强度为设计多功能电子设备（如应变触发晶体管、二极管和应力传感器）开辟了道路，这些设备在人机界面中具有可行的应用。
Coupling of magnetic, ferroelectric, or piezoelectric properties with charge transport at oxide interfaces provides the option to revolutionize classical electronics. Here, the modulation of electrostatic potential barriers at tailored ZnO bicrystal interfaces by stress-induced piezoelectric polarization is reported. Specimen design by epitaxial solid-state transformation allows for both optimal polarization vector alignment and tailoring of defect states at a semiconductor-semiconductor interface. Both quantities are probed by transmission electron microscopy. Consequently, uniaxial compressive stress affords a complete reduction of the potential barrier height at interfaces with head-to-head orientation of the piezoelectric polarization vectors and an increase in potential barrier height at interfaces with tail-to-tail orientation. The magnitude of this coupling between mechanical input and electrical transport opens pathways to the design of multifunctional electronic devices like strain triggered transistors, diodes, and stress sensors with feasible applications for human-computer interfacing.