A possible pressure-induced superconducting-semiconducting transition in nearly optimally doped single crystalline YBa2Cu3O7-δ
A possible pressure-induced superconducting-semiconducting transition in nearly optimally doped single crystalline YBa2Cu3O7-δ
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DOI：
10.1063/1.3623475
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发表时间：
2011-08
影响因子：
4
通讯作者：
T. Muramatsu;D. Pham;C. Chu
中科院分区：
文献类型：
--
作者：
T. Muramatsu;D. Pham;C. Chu
在29 GPa压力下，对室温转变温度为90.7K的单晶、近最佳掺杂高温铜酸盐超导体YBa_2Cu_3O_（7-δ）的压力效应进行了实验研究。在60 K和1024 GPa下，超导性突然消失，并伴随着热激活电阻，表明可能存在压力诱导的超导-半导体转变。通过与近期高压下Bi_2Sr_2Ca_2Cu_3O_（10-δ）的实验结果的比较，提出了控制这种电子不稳定性可能有助于进一步提高三层铜氧化物超导体的164 K超导转变温度记录。
The pressure effect on the single-crystalline, nearly optimally doped high temperature cuprate superconductor YBa2Cu3O7-δ with a sharp ambient transition temperature of 90.7 K has been investigated resistively up to 29 GPa. An abrupt disappearance of superconductivity at 60 K under ∼24 GPa was detected, accompanied by a thermally activated resistance, suggesting a possible pressure-induced superconducting-semiconducting transition. By comparing the present results with those of recent high pressure work on Bi2Sr2Ca2Cu3O10-δ, it is proposed that the control of such electronic instabilities may further help raise the superconducting transition temperature record of 164 K in tri-layer cuprate superconductors by pressures.