OPTICAL DOPING OF WAVE-GUIDE MATERIALS BY MEV ER IMPLANTATION
OPTICAL DOPING OF WAVE-GUIDE MATERIALS BY MEV ER IMPLANTATION
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DOI：
10.1063/1.349234
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发表时间：
1991-10-01
影响因子：
3.2
通讯作者：
POATE, JM
中科院分区：
文献类型：
--
作者：
POLMAN, A;JACOBSON, DC;POATE, JM
MeV的铒离子注入到微米厚的二氧化硅和磷硅酸盐玻璃膜和1200埃厚的氮化硅膜的研究，其目的是将稀土掺杂剂的光学活性网站在网络中。 注入能量和注量范围从500 keV到3.5 MeV和3.8 × 10（15）到9.0 × 10（16）离子/cm 2。 经过适当的热退火后，所有注入薄膜均显示出以λ = 1.54 μ m为中心的强烈且尖峰的光致发光光谱。 的荧光寿命范围从6到15 ms的硅基玻璃，取决于退火处理和Er浓度。 氮化硅薄膜显示较低的寿命，在< 0.2-7毫秒的范围内。所有材料的退火特性解释离子诱导的网络缺陷的退火。 在4.2K下使用光致发光光谱识别这些缺陷。 研究了Er的浓度猝灭、扩散和沉淀行为。
Implantation of MeV erbium ions into micron-thick silica and phosphosilicate glass films and 1200-angstrom-thick Si3N4 films is studied with the aim of incorporating the rare-earth dopant on an optically active site in the network. Implantation energies and fluences range from 500 keV to 3.5 MeV and 3.8 X 10(15) to 9.0 X 10(16) ions/cm2. After proper thermal annealing, all implanted films show an intense and sharply peaked photoluminescence spectrum centered around lambda = 1.54-mu-m. The fluorescence lifetime ranges from 6 to 15 ms for the silicabased glasses, depending on annealing treatment and Er concentration. Silicon nitride films show lower lifetimes, in the range < 0.2-7 ms. Annealing characteristics of all materials are interpreted in terms of annealing of ion-induced network defects. These defects are identified using photoluminescence spectroscopy at 4.2 K. Concentration quenching, diffusion and precipitation behavior of Er is also studied.