Measurements of Fano factors in silicon and germanium in the low-energy X-ray region
Measurements of Fano factors in silicon and germanium in the low-energy X-ray region
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低能 X 射线区域硅和锗的 Fano 因子测量
DOI：
10.1016/s0168-9002(97)00965-0
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发表时间：
1997
影响因子：
1.4
通讯作者：
B. Lowe
中科院分区：
文献类型：
--
作者：
B. Lowe
对硅和锗的低能 X 射线区域的 Fano 因子进行了估计（硅为 109 eV 至 5.9 keV，锗为 183 eV 至 5.9 keV）。这些测量基于对大量 X 射线探测器的观察，并考虑到不完全电荷收集的影响。对于低温下的硅和锗，X 射线能量为 5.9 keV 时的值分别为 0.1161 ± 0.0001 和 0.1057 ± 0.0002。发现这些值在 183 eV 处收敛并增加到约 0.15。与理论预测进行了比较，并讨论了在 100 eV 区域进行测量的困难。
Estimates of Fano factors have been made in the low-energy X-ray region for both silicon and germanium (109 eV to 5.9 keV for silicon and 183 eV to 5.9 keV for germanium). The measurements are based on observations on a large number of X-ray detectors taking into account the effects of incomplete charge collection. The values at an X-ray energy of 5.9 keV are 0.1161 ± 0.0001 and 0.1057 ± 0.0002, respectively, for silicon and germanium at cryogenic temperatures. The values are found to converge and increase to about 0.15 at 183 eV. Comparisons are made with theoretical predictions and the difficulties of making measurements in the 100 eV region are discussed.