Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As
Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As
复制标题
InGaAs 薄层对嵌入 InAl(Ga)As 中的 InAs 量子点的影响
DOI：
10.1063/1.1623947
复制
发表时间：
2003
影响因子：
4
通讯作者：
D. Oh
中科院分区：
文献类型：
--
作者：
Jin;Jin Hong Lee;S. Hong;W. Han;H. Kwack;D. Oh
利用原子力显微镜（AFM）、透射电子显微镜（TEM）和光致发光（PL）光谱研究了In0.32Ga0.68As薄层对InAl（Ga）As自组装量子点结构和光学性质的影响. AFM和TEM图像表明，量子点上生长的一个薄的In0.32Ga0.68As层的尺寸增加，与减少的量子点上的InAl（Ga）As层的尺寸波动。量子点的形状也更加各向同性，表明量子点更接近于理想的零维系统。在1.5 nm In0.32Ga0.68As层上生长的InAs量子点的PL峰位为1.55 μm，线宽展宽为64 meV，比没有In0.32Ga0.68As层的量子点样品的PL峰位窄一些，这与AFM和TEM的结果一致。
Influences of a thin In0.32Ga0.68As layer on the structural and optical properties of self-assembled InAs quantum dots (QDs) embedded in an InAl(Ga)As matrix, which was lattice-matched to an InP substrate, were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. AFM and TEM images showed that the size of QDs grown on a thin In0.32Ga0.68As layer was increased, with a reduction in size fluctuation compared to that of QDs on an InAl(Ga)As layer. The shape of the QD was also more isotropic, indicating that the QD would be closer to an ideal zero-dimensional system. The PL peak position of the InAs QDs grown on a 1.5 nm In0.32Ga0.68As layer was 1.55 μm, with linewidth broadening of 64 meV that was somewhat narrower than those of the QD samples without the In0.32Ga0.68As layer, which agreed well with the AFM and TEM results.
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H