Fabrication of quantum point contacts by imprint lithography and transport studies
Fabrication of quantum point contacts by imprint lithography and transport studies
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通过压印光刻和传输研究制造量子点接触
DOI：
10.1116/1.1319705
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发表时间：
2000
影响因子：
1.4
通讯作者：
R. Sijbesma
中科院分区：
文献类型：
--
作者：
I. Martini;Silke Kuhn;M. Kamp;L. Worschech;A. Forchel;Dominik Eisert;J. Koeth;R. Sijbesma
本文演示了压印光刻技术与纳米电子器件制造的集成。我们提出了一种量子点接触（QPC），其具有通过压印光刻图案化的分裂栅极。半导体衬底是调制掺杂的GaAs/AlGaAs异质结构，二维电子气位于表面下方约90 nm处。具有分栅图案的硅模具被压印到位于半导体顶部的聚甲基丙烯酸甲酯薄膜中。肖特基栅极通过金属蒸发和剥离制造。栅极尖端间距范围为 120 至 600 nm。在 T=2 K 下进行的传输研究显示了不同栅极电压下的电导量化。在具有电子束光刻定义的门的参考 QPC 上进行的测量显示了类似的结果。这表明压印不会影响半导体的电子性能。
This article demonstrates the integration of imprint lithography into nanoelectronic device fabrication. We present a quantum point contact (QPC) with split gates patterned by imprint lithography. The semiconductor substrate is a modulation-doped GaAs/AlGaAs heterostructure with the two-dimensional electron gas located about 90 nm below the surface. A Si mold with a split-gate pattern is embossed into a poly(methylmethacrylate) film located on top of the semiconductor. The Schottky gates are fabricated by metal evaporation and liftoff. The gate tip separation ranges from 120 to 600 nm. Transport studies performed at T=2 K show conductance quantization with varying gate voltages. Measurements performed on a reference QPC with gates defined by electron beam lithography show similar results. This indicates that the imprint does not affect the electronic performance of the semiconductor.