Effect of patterning on defect structure in GaAs grown on Si
Effect of patterning on defect structure in GaAs grown on Si
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图案化对 Si 上生长的 GaAs 缺陷结构的影响
DOI：
10.1063/1.103716
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
Y. Kao
中科院分区：
文献类型：
--
作者：
H. Tsai;Y. Kao
在这封信中，我们讨论了图案生长在降低硅上砷化镓缺陷密度方面的有效性。缺陷的减少被认为是受边缘轮廓和初始砷化镓岛缺陷密度的影响。模式边缘（掩模边缘或大台阶）通常是产生微孪晶/堆积错误的位置。位错的相互作用抑制位错向图案边缘的滑动，从而影响图案生长在提高脱毛质量方面的有效性。研究还表明，表面取向影响失配位错的形成与首选汉堡向量。通过考虑Si和“倾斜”GaAs晶格之间的界面上不同晶格平面的失配变化，可以解释这一观察结果。
In this letter, we address the effectiveness of patterned growth in reducing defect density in GaAs on Si. Defect reduction is considered to be subject to the effect of edge profile and the density of defects in initial GaAs islands. Pattern edges (mask edges or large steps) are often the sites for generating microtwins/stacking faults. Mutual interaction of dislocations inhibits the gliding of dislocations to pattern edges, thus affecting the effectiveness of patterned growth in improving the epilayer quality. The study also shows that surface orientation influences the formation of misfit dislocations with a preferred Burgers vector. This observation is interpreted by considering the variation of misfit with different lattice planes across the interface between Si and ‘‘tilted’’ GaAs lattices.