Single-Photon Generation from Nitrogen Isoelectronic Traps in III-V Semiconductors
Single-Photon Generation from Nitrogen Isoelectronic Traps in III-V Semiconductors
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III-V 族半导体中氮等电子陷阱产生单光子
DOI：
10.1002/9783527699940.ch7
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Liaolin Zhang
中科院分区：
文献类型：
--
作者：
Y. Sakuma;M. Ikezawa;Liaolin Zhang
一些缺陷或杂质在半导体晶体中充当光学活性发光中心。这些中心提供了理想的量子双能级系统，适用于稳定的按需单光子源。这些中心的主要优点之一是，原则上它们每个都应表现出相同的发射能量，因为它们不受主晶体中尺寸和形状分布的影响。本文概述了我们从 III-V 族化合物半导体（例如 GaP 和 GaAs）中的单个等电子陷阱产生单光子的新方法的进展，其中等电子氮杂质通过使用金属有机化学气相沉积技术以受控方式进行 δ 掺杂。
Some defects or impurities behave as optically active luminescent centers in semiconductor crystals. These centers provide ideal quantum two‐level systems and are applicable to a stable on‐demand single‐photon source. One of the major advantages of these centers is that each of them should exhibit, in principle, identical emission energy because they are free from size and shape distributions in a host crystal. This paper provides an overview of the progress of our novel approach to generate single photons from individual isoelectronic traps in III–V compound semiconductors, such as GaP and GaAs, in which the isoelectronic nitrogen impurities were δ‐doped in a controlled manner by using metalorganic chemical vapor deposition technique.
影响因子：
10.8
作者：
Holmes, Mark J.;Choi, Kihyun;Arakawa, Yasuhiko
通讯作者：
Arakawa, Yasuhiko
影响因子：
1.5
作者：
M. Ikezawa;Y. Sakuma;Y. Masumoto
通讯作者：
M. Ikezawa;Y. Sakuma;Y. Masumoto