Band-to-band Auger Recombination in Silicon and Germanium
Band-to-band Auger Recombination in Silicon and Germanium
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DOI：
10.1088/0031-8949/8/4/007
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发表时间：
1973-10
期刊：
影响因子：
2.9
通讯作者：
N. Nilsson
中科院分区：
文献类型：
--
作者：
N. Nilsson
利用巨大的脉冲红宝石激光器，在硅和锗中实现了高浓度的电子和空穴。考虑到激光脉冲对样品的加热和高载流子浓度引起的带隙减小，建立了理论模型，分析了注入脉冲前后复合辐射的动力学和光谱分布。复合辐射信号的衰减表明，高浓度时以三阶复合过程（带间冲击或俄歇复合）为主。得到了硅在300 K-800 K温度区间的俄歇复合系数γ3 10-31 - 4 × 10-30 cm6/s。
High concentrations of electrons and holes in silicon and germanium have been achieved by optical injection by a giant pulse ruby laser. The kinetics and spectral distribution of the recombination radiation during and after the injection pulse have been analyzed by a theoretical model which takes into account the heating of the sample by the laser pulse as well as the decrease of the band gap which is due to the high carrier concentration. The decay of the recombination radiation signal shows that a third-order recombination process (band-to-band impact or Auger recombination) is predominant at high concentrations. The value of the Auger recombination coefficient γ3 10-31 - 4 × 10-30 cm6/s is obtained for silicon in the temperature interval 300 K-800 K.