Si-doped cubic GaN grown on a Si(001) substrate with a thin flat SiC buffer layer
Si-doped cubic GaN grown on a Si(001) substrate with a thin flat SiC buffer layer
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在具有薄平坦 SiC 缓冲层的 Si(001) 衬底上生长的 Si 掺杂立方 GaN
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
M. Ichikawa
中科院分区：
文献类型：
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作者：
D. Wang;S. Yoshida;M. Ichikawa
在Si（001）衬底上生长了高Si掺杂的立方GaN薄膜，衬底上覆盖了2.5nm厚的3C-SiC缓冲层。Si的掺杂浓度范围为1×1019 ~ 1×1021 cm-3。在Si掺杂后，初始成核很容易合并，产生具有4×1重构和[110]方向优先生长的平坦表面。堆垛层错密度也增加。Si原子取代Ga原子和层错密度的增加有助于缓解GaN薄膜和衬底晶格失配引起的GaN中的压应力。GaN在室温下表现出很强的光致发光强度。
Highly Si-doped cubic GaN films were grown on a Si(001) substrate coated with a 2.5-nm-thick flat 3C–SiC buffer layer. The Si doping concentration ranged from 1×1019 to 1×1021 cm−3. Upon Si doping, the initial nucleations easily coalesced, producing a flat surface with a 4×1 reconstruction and preferential growth in the [110] direction. The density of stacking faults also increased. The substitution of Ga atoms with Si atoms and the increased density of stacking faults help to relieve the compressive stress in GaN caused by the lattice mismatch of the GaN film and the substrate. GaN showed a strong photoluminescence intensity at room temperature.