Recent progress in front end ASICs for high-energy physics
Recent progress in front end ASICs for high-energy physics
复制标题
高能物理前端 ASIC 的最新进展
DOI：
10.1016/j.nima.2005.01.064
复制
发表时间：
2005
影响因子：
1.4
通讯作者：
G. Hall
中科院分区：
文献类型：
--
作者：
G. Hall
简要介绍了CMS实验中专用集成电路（ASIC）的发展情况，沿着技术选择的动机，特别是CMS跟踪器的硅条读出。过去几年的主要变化是CMS广泛采用商业深亚微米CMOS技术，而不是特定的辐射硬化工艺，这似乎是几年前满足LHC要求的唯一解决方案。描述了其原因，并介绍了代表性芯片和技术的性能。对未来发展的影响进行了概述。
Developments of Application Specific Integrated Circuits (ASICs) for applications in the CMS experiment are briefly described, along with the motivations for the choice of technology, focussing especially on silicon strip readout of the CMS tracker. The major change in the last few years has been the widespread adoption in CMS of a commercial deep sub-micron CMOS technology in preference to specific radiation-hardened processes which seemed to be the only solution meeting the LHC requirements only a few years ago. The reasons for this are described and the performance of representative chips and the technology presented. The implications for future developments are outlined.