The performance of 4H-SiC detector at high temperature after gamma irradiation
The performance of 4H-SiC detector at high temperature after gamma irradiation
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4H·SiC探测器在伽马辐照后高温下的性能
DOI：
10.1016/j.radphyschem.2019.05.004
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发表时间：
2019-09-01
影响因子：
2.9
通讯作者：
Lei, Jiarong
中科院分区：
文献类型：
--
作者：
Li, Zheng;Wu, Jian;Lei, Jiarong
制备了一种基于肖特基二极管的4H-SiC探测器，并研究了高温和γ辐照对4H-SiC探测器的综合影响。我们在伽马辐照前测试了探测器在高温下的性能。在高达200℃的高温γ辐照下，用4H-SiC探测器测量了样品的I-V特性和α能谱，在200℃、70 V的工作电压下，4H-SiC探测器的漏电流仅为98.7 nA。该探测器在200℃下检测Am-241 α粒子的能量分辨率为2.36%。然后用Co-60 γ射线照射探测器，照射剂量为1mgy。每次辐照后在200℃下进行I-V特性测量和能谱测量。辐照后正向电流和反向电流均增大。从正向I-V曲线中提取出肖特基势垒高度，当剂量为1 MGy时，肖特基势垒高度降低0.17 Vat。对Am-241源的响应表明，探测器的电荷收集效率仅下降1.6%，FWHM可视为不变。实验证明，4H-SiC探测器在暴露于1 MGy的Co-60 γ射线后，可在200℃下良好工作。
A 4H-SiC detector based on the Schottky diode was fabricated and the combined influence of high temperature and gamma irradiation on 4H-SiC detector has been investigated. We tested the detector's performance at high temperature before gamma irradiation. I-V characteristics and the alpha energy spectra were measured with the 4H-SiC detector before gamma irradiation at high temperature up to 200 degrees C. The leakage current of the 4H-SiC detector was only 98.7 nA at 200 degrees C and with a operating voltage of 70 V. The detector showed an energy resolution of 2.36% at 200 degrees C in detection of Am-241 alpha-particles. Then the detector was irradiated by Co-60 gamma-ray up to a dose of 1 MGy. I-V characteristics measurements and a energy spectrum measurements were also performed at 200 degrees C after each irradiation. Both the forward current and the reverse current increased after gamma irradiation. The Schottky barrier height was extracted from the forward I-V curves and it decreased by 0.17 Vat a dose of 1 MGy. The response for Am-241 source showed that the charge collection efficiency of the detector reduced by only 1.6% and the FWHM can be regarded as unchanged. It has been proved that 4H-SiC detector can work well at 200 degrees C after exposure to Co-60 gamma-ray of 1 MGy.