Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes
Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes
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DOI：
10.1063/1.121386
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发表时间：
1998-05-11
影响因子：
4
通讯作者：
Setter, N
中科院分区：
文献类型：
--
作者：
Colla, EL;Taylor, DV;Setter, N
一种简单而可靠的方法，它允许人们区分两种主要的微观情况，以抑制开关极化（P-r（s）），即，提出了通过Pb（Zr，Ti）O-3薄膜（PZT）钉扎铁电畴壁（DW）（体方案）和由于在电极界面处的核抑制而抑制相反畴的生长（界面方案）。此外，发现并研究了一种新的电处理方法，该方法能显著抑制厚度大于1.4 μ m的Pt-PZT-Pt铁电电容器（FECAP）中的P-r（s）。它包括施加外部交变电场（E-e），该电场以非常低的频率（1.7 mHz）循环极化。仅在10-20个循环后，P-r（s）可被抑制10倍。当在较高频率（30 kHz）下经受E-e时，相同FECAP在获得等效P-r（s）抑制（下文称为疲劳）之前经受至少10（8）次切换。用两种不同的程序获得的疲劳状态似乎是不同的。在第一种情况下（慢循环），这表明，抑制的P-r（s）的DW钉扎的情况下，而在第二种情况下，这对应于正常的疲劳过程，它是有关的接口的情况。(C)1998年美国物理学会。[S0003-6951（98）01619-2]。
A simple and reliable method which allows one to distinguish between the two major microscopic scenarios for the suppression of the switching polarization (P-r(s)), i.e., pinning of ferroelectric domain walls (DWs) through the Pb(Zr,Ti)O-3 film (PZT) (bulk scenario) and inhibition of the growth of opposite domains due to the nucleus suppression at the electrode interfaces (interface scenario), is proposed. In addition, a new electric treatment able to significantly suppress P-r(s) in Pt-PZT-Pt ferroelectric capacitors (FECAPs) of thicknesses above 1.4 mu m, was discovered and studied. It consists of the application of an external alternating electric field (E-e) which cycles the polarization at very low frequency (1.7 mHz). After only 10-20 cycles, P-r(s) can be suppressed by a factor of 10. The same FECAP, when subjected to E-e at higher frequency (30 kHz), endures at least 10(8) switches, before attaining an equivalent P-r(s), suppression (hereafter called fatigue). The fatigued states obtained with the two different procedures appear to be different. In the first case (slow cycling) it is suggested that the suppression of P-r(s) is related to the DW pinning scenario, whereas in the second case-which corresponds to the normal fatiguing procedure-it is related to the interface scenario. (C) 1998 American Institute of Physics. [S0003-6951(98)01619-2].