Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors
Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors
复制标题
DOI：
10.1088/0256-307x/34/10/108101
复制
发表时间：
2017-09
影响因子：
3.5
通讯作者：
Yan-Yan Zhang-Yan;R. Cheng;S. Xie;Shun Xu;Xiao Yu;Rui Zhang;Yi Zhao
中科院分区：
文献类型：
--
作者：
Yan-Yan Zhang-Yan;R. Cheng;S. Xie;Shun Xu;Xiao Yu;Rui Zhang;Yi Zhao
我们研究了由三种相变材料（PCM）（Ge 2Sb 2 Te 5，Sb 2 Te 3，GeTe）沉积引起的各种绝缘体上锗（GeOI）微结构的应变。相变材料在低温热退火条件下发生相变，由非晶态转变为多晶态，导致相变材料薄膜发生本征收缩。进行拉曼光谱分析以比较由各种PCM在GeOI微结构中引起的应变。通过比较，Sb 2 Te 3可以在低温退火后的GeOI微结构中诱导最大量的拉伸应变。基于由拉曼峰位移计算的应变，采用有限元数值模拟方法计算了具有PCM衬层应力源的Ge n-MOSFET的应变诱导电子迁移率增强。在Ninv=1× 1013 cm −2时，采用Sb 2 Te 3衬层应力源可以使Ge MOSFET的电子迁移率提高22%，表明PCM特别是Sb 2 Te 3衬层应力源是一种很有前途的Ge MOSFET性能增强技术。
We investigate the strain in various Ge-on-insulator (GeOI) micro-structures induced by three phase-change materials (PCMs) (Ge2Sb2Te5, Sb2Te3, GeTe) deposited. The PCMs could change the phase from amorphous state to polycrystalline state with a low temperature thermal annealing, resulting in an intrinsic contraction in the PCM films. Raman spectroscopy analysis is performed to compare the strain induced in the GeOI micro-structures by various PCMs. By comparison, Sb2Te3 could induce the largest amount of tensile strain in the GeOI micro-structures after the low temperature annealing. Based on the strain calculated from the Raman peak shifts, finite element numerical simulation is performed to calculate the strain-induced electron mobility enhancement for Ge n-MOSFETs with PCM liner stressors. With the adoption of Sb2Te3 liner stressor, 22% electron mobility enhancement at Ninv=1×1013cm−2 could be achieved, suggesting that PCM especially Sb2Te3 liner stressor is a promising technique for the performance enhancement of Ge MOSFETs.