Broadband Photosensitive Medium Based on Amorphous Equichalcogenides
Broadband Photosensitive Medium Based on Amorphous Equichalcogenides
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DOI：
10.1021/acsaelm.2c01075
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发表时间：
2022-11-01
影响因子：
4.7
通讯作者：
Bureau, Bruno
中科院分区：
文献类型：
--
作者：
Golovchak, Roman;Plummer, Jarres;Bureau, Bruno
提出了一种基于含锗和锑的非晶等硫族化物薄膜的光敏介质，其特性有望在全硫族化物光子学、传感器和光电子学中应用。DC电导率的光学性质、温度和曝光波长依赖性被示出为与卤化物钙钛矿的那些相当，这可能使得非晶equichalcogenides成为非常有吸引力的替代品。发现暗电阻率随温度的变化遵循指数衰减，在70 K的温度区间内覆盖2个数量级。当与其暗值相比时，光暴露导致电流的几个相对变化的顺序。在整个400-1000 nm范围的研究波长的低功率（毫瓦范围）曝光下观察到强光电流响应。温度的升高会导致显影材料的光响应降低，当仅使用几毫瓦的曝光功率时，发现在高于120摄氏度的温度下该光响应消失。
A photosensitive medium based on amorphous equichalcogenide thin films containing germanium and antimony is proposed with characteristics promising for applications in all-chalcogenide photonics, sensors, and photovoltaics. Optical properties, temperature, and exposure wavelength dependence of DC electrical conductivity are shown to be comparable with those for halide perovskites, which potentially makes amorphous equichalcogenides a very attractive alternative. The change in dark resistivity with temperature is found to follow exponential decay, covering 2 orders of magnitude over a 70 K temperature interval. Light exposure leads to several orders of relative changes in a current when compared to its dark value. A strong photocurrent response is observed under low power (milliwatts range) exposure across the entire 400-1000 nm range of the investigated wavelengths. An increase in temperature leads to a decrease in the photoresponse of the developed material, which is found to vanish at temperatures higher than 120 degrees C when only a few milliwatts of exposure power is used.