ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration
ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration
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DOI：
10.1149/2.0221807jss
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发表时间：
2018-01-01
影响因子：
2.2
通讯作者：
Zhao, Hongping
中科院分区：
文献类型：
--
作者：
Feng, Zixuan;Rafique, Subrina;Zhao, Hongping
本文报道了采用低成本和可扩展的水热法在各种衬底上合成氧化锌纳米壁（NWLs）的研究，目标是用于柔性传感器器件。利用合成的ZnO NWLs，通过转移工艺演示了柔性压电传感器的原型装置。研究了前驱体浓度和铝种子层厚度对ZnO纳米wl形貌和生长速率的影响。研究了热处理对NWLs形貌和结晶质量的影响。为了制造传感器器件，ZnO NWL层通过薄的聚甲基丙烯酸甲酯（PMMA）层转移到不同的衬底上。实现了热退火ZnO NWLs在柔性衬底上的晶片级转移。所演示的原型装置可以在外力作用下产生高达300毫伏的输出电压。利用COMSOL Multiphysics建立仿真模型，研究了ZnO NWLs器件的压电特性。仿真结果与实验数据吻合较好。所演示的基于ZnO nwl的柔性器件适用于可穿戴纳米器件和运动传感器，这些器件将受益于它们的大表面积。(C)作者2018。由ECS出版。
This paper reports the synthesis of ZnO nanowalls (NWLs) on various substrates by low cost and scalable hydrothermal approach targeting for flexible sensor device applications. Prototype flexible piezoelectric sensor devices using the synthesized ZnO NWLs were demonstrated through a transfer process. The roles of precursor chemical concentration and aluminum seed layer thickness in determining the morphology and the growth rate of the as grown ZnO NWLs were investigated. Effects of thermal annealing on the morphology and the crystalline quality of the NWLs were studied. To fabricate the sensor devices, ZnO NWL layers were transferred on to different substrates using thin Polymethyl methacrylate (PMMA) layer. Wafer scale transfer of thermally annealed ZnO NWLs to flexible substrates has been achieved. The demonstrated prototype devices can generate up to 300 mV of output voltage with external applied forces. Simulation model using COMSOL Multiphysics was developed to study the piezoelectric properties of the ZnO NWLs based devices. The simulation results agree well with the experimental data. The demonstrated ZnO NWLs based flexible devices are applicable for wearable nanodevices and motion sensors that will benefit from their large surface areas. (C) The Author(s) 2018. Published by ECS.