Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor
Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor
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DOI：
10.1109/tns.2012.2231880
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发表时间：
2013-02-01
影响因子：
1.8
通讯作者：
Iwata, Atsushi
中科院分区：
文献类型：
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作者：
Ryu, Syukyo Gando;Tsuru, Takeshi Go;Iwata, Atsushi
我们一直在开发单片有源像素传感器与0.2 μ m绝缘体上硅（SOI）CMOS技术，称为SOIPIX，高速宽带X射线成像光谱未来的天文卫星。在这项工作中，我们研究了一种用于正面照明的软X射线修正芯片（XRPIX 1b）。在1.5 keV的Al K α线被成功地检测到，并且在该能量下从单个像素实现了188 eV（FWHM）的能量分辨率。灵敏度提高到6 μ V/电子，读出噪声为18电子均方根。来自用6.4keV（Fe K α）X射线照射的3 X 3像素的数据表明，相邻像素之间的电路串扰小于0.5%。
We have been developing monolithic active pixel sensors with 0.2 mu m Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revised chip (XRPIX1b) for soft X-rays used in frontside illumination. The Al K alpha line at 1.5 keV is successfully detected and energy resolution of 188 eV (FWHM) is achieved from a single pixel at this energy. The responsivity is improved to 6 mu V/electron and the readout noise is 18 electrons rms. Data from 3 x 3 pixels irradiated with 6.4 keV (Fe K alpha) X-rays demonstrates that the circuitry crosstalk between adjacent pixels is less than 0.5%.