Characterization of the Variable Retention Time in Dynamic Random Access Memory
Characterization of the Variable Retention Time in Dynamic Random Access Memory
复制标题
动态随机存取存储器中可变保留时间的表征
DOI：
10.1109/ted.2011.2160066
复制
发表时间：
2011
影响因子：
3.1
通讯作者：
Hyungcheol Shin
中科院分区：
文献类型：
--
作者：
Heesang Kim;Byoungchan Oh;Y. Son;Kyung;S. Cha;Jae;Sung;Hyungcheol Shin
为了研究动态随机存储器（DRAM）保持测试中漏电流波动与VRT的关系，模拟了动态随机存储器VRT测试的真实的过程。通过对仿真结果的分析，提出了一种新的有效的VRT测量方法。此外，我们调查的VRT现象在DRAM中使用本研究中开发的VRT表征方法的特点。
To study the relationship between the original leakage current fluctuation and the detected variable retention time (VRT) from the retention test of dynamic random access memory (DRAM), we simulated the real procedure of the VRT measurement of DRAM. By investigating the results of the simulation, we proposed a new effective VRT measurement method based on the comparison between measurement and simulation. In addition, we investigated the characteristics of the VRT phenomenon in DRAM using the VRT characterization method developed in this study.