A New Lattice-matched In0.17Al0.83N ~ GaN Based Heterostructure IMPATT Diode for Terahertz Application
A New Lattice-matched In0.17Al0.83N ~ GaN Based Heterostructure IMPATT Diode for Terahertz Application
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一种用于太赫兹应用的类似于 GaN 基异质结构 IMPATT 二极管的新型晶格匹配 In0.17Al0.83N
DOI：
10.1088/1361-6641/ab4786
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发表时间：
2019
影响因子：
1.9
通讯作者：
Hao Yue
中科院分区：
文献类型：
--
作者：
Li Xiusheng;Yang Lin'An;Ma Xiaohua;Hao Yue
对在 220 GHz 低端太赫兹频率下设计的新型晶格匹配 In 0.17 Al 0.83 N/GaN 异质结构冲击雪崩渡越时间 (IMPATT) 二极管的直流和微波性能进行了仿真研究。将异质结构 IMPATT 二极管的电场、击穿电压、射频输出功率和 DC-RF 转换效率与 GaN 同质结构 IMPATT 二极管进行了比较。结果表明，异质结构 IMPATT 二极管获得了更局域化的雪崩区宽度。 In 0.17 Al 0.83 N 层宽为 45 nm 时，与其他异质结构和同质结构 IMPATT 二极管相比，异质结构 IMPATT 二极管具有最高的效率 (15.4%) 和适中的射频输出功率密度 (1.62 MW cm− 2)，以及最低的 Q 因子 (6.57)。
Simulation studies are made on the dc and microwave performance of a novel lattice-matched In 0.17 Al 0.83 N/GaN heterostructure impact avalanche transit time (IMPATT) diode designed at the low-end terahertz frequency of 220 GHz. The electric field, breakdown voltage, rf output power and the dc-to-rf conversion efficiency of the heterostructure IMPATT diodes are compared with the GaN homostructure IMPATT diode. The results show that, a more localized avalanche region width is obtained for the heterostructure IMPATT diodes. With value of 45 nm of the In 0.17 Al 0.83 N layer width, the heterostructure IMPATT diode gives the highest efficiency (15.4%) with moderate rf output power density (1.62 MW cm− 2), and the lowest Q-factor (6.57) as compared to other heterostructure and homostructure IMPATT diodes.