Orientation-controlled growth of hexagonal boron nitride monolayers templated from graphene edges
Orientation-controlled growth of hexagonal boron nitride monolayers templated from graphene edges
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DOI：
10.7567/apex.10.055102
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发表时间：
2017-04
影响因子：
2.3
通讯作者：
Eriko Maeda;Y. Miyata;H. Hibino;Y. Kobayashi;R. Kitaura;H. Shinohara
中科院分区：
文献类型：
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作者：
Eriko Maeda;Y. Miyata;H. Hibino;Y. Kobayashi;R. Kitaura;H. Shinohara
研究了从石墨烯边缘外延生长的六方氮化硼（hBN）单层的晶体取向。低能电子显微镜观察表明，单个hBN晶粒的取向取决于石墨烯的模板锯齿形边缘的方向。此外，在hBN中的三角形原子缺陷被用来确认通过高分辨率透射电子显微镜观察的外延hBN的取向。结果表明，石墨烯/hBN界面上碳-硼键的形成决定了hBN的取向，这为制备均匀的界面结构和取向可控的hBN晶粒提供了一种很有前途的方法。
The crystal orientation of epitaxially grown hexagonal boron nitride (hBN) monolayers from graphene edges was investigated. Low-energy electron microscopy observations reveal that the orientation of individual hBN grains is dependent on the direction of the templated zigzag edges of graphene. Furthermore, the triangular atomic defects in hBN were used to confirm the orientation of epitaxial hBN through high-resolution transmission electron microscopy observations. The results indicate that the orientation of epitaxially grown hBN is determined by the formation of carbon–boron bonds at the graphene/hBN interface, which provides a promising way of producing uniform interface structures and orientation-controlled hBN grains.