High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
复制标题
原生 P 型 4H-SiC 外延层的高温深能级瞬态光谱
DOI：
10.1143/jjap.45.l285
复制
发表时间：
2006
影响因子：
1.5
通讯作者：
T. Kimoto
中科院分区：
文献类型：
--
作者：
K. Danno;T. Kimoto
研究了生长的p型4H-碳化硅的深能级。在350~700K温度范围内，用深能级瞬变光谱(DLTS)探测到了HK2、HK3和HK4三个空穴陷阱，每个陷阱的浓度约为1-3×1012 cm-3。活化能估计为EV+0.84 eV，EV+1.27 eV，以及EV+1.44 eV。根据双关联DLTS测量，这些空穴陷阱可能是施主类(+/0)陷阱。HK3和HK4的浓度通过1350℃的热处理降低到检测下限(1×1011 cm-3)以下。另一方面，HK2中心的温度更稳定，大约在1550℃。
Deep levels in as-grown p-type 4H–SiC have been investigated. Three hole traps, namely HK2, HK3, and HK4, were detected by deep level transient spectroscopy (DLTS) in the temperature range from 350 to 700 K. The concentration of each trap is approximately 1–3 ×1012 cm-3. Activation energy is estimated to be EV + 0.84 eV for HK2, EV + 1.27 eV for HK3, and EV + 1.44 eV for HK4. These hole traps may be donor-like (+/0) traps according to the double-correlated DLTS measurements. The concentrations of HK3 and HK4 decrease below the detection limit (1 ×1011 cm-3) by annealing at 1350 °C. On the other hand, the HK2 center is thermally more stable, the annealing temperature being approximately 1550 °C.