Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition
Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition
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单轴拉伸条件下单晶硅薄膜断裂各向异性
DOI：
10.1016/j.sna.2004.06.003
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发表时间：
2005
影响因子：
4.6
通讯作者：
Hiroshi Tanaka
中科院分区：
文献类型：
--
作者：
Xueping Li;T. Kasai;S. Nakao;T. Ando;M. Shikida;Kazuo Sato;Hiroshi Tanaka
本文通过单轴拉伸实验研究了晶体取向对单晶硅薄膜断裂韧性和断裂路径的影响。采用聚焦离子束（FIB）工艺在具有不同拉伸取向的硅（110）和（001）薄膜样品中间引入缺口。断裂韧性值从1到2 MPam 1/2变化，这取决于拉伸取向。扫描电子显微镜（SEM）观察表明，低折射率面，{111}和{110}，相对于试样表面的倾斜角度影响断裂路径显着。{111}面和{110}面是最佳解理面。
In this work, we studied the effect of crystallographic orientation on fracture toughness and fracture paths of single crystal silicon film by a uniaxial tensile test. A focused ion beam (FIB) process was used to introduce a notch in the middle of silicon (110) and (001) film specimens that have different tensile orientations. The fracture toughness value varied from 1 to 2MPam1/2, depending on the tensile orientation. The scanning electron microscope (SEM) observations suggested that the inclination angle of the low index planes, {111} and {110}, relative to the specimen surface affects the fracture path significantly. The {111} and {110} planes were the preferred cleavage planes.