Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction
Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction
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基于无机钙钛矿CsPbBr3/GeSn异质结的宽带光电探测器
DOI：
10.1002/smtd.202100517
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发表时间：
2021-06
期刊：
影响因子：
12.4
通讯作者：
Xue Chunlai
中科院分区：
文献类型：
--
作者：
Cong Hui;Chu Xinbo;Wan Fengshuo;Chu Zema;Wang Xiaoyu;Ma Yao;Jiang Jizhong;Shen Liang;You Jingbi;Xue Chunlai
具有宽带响应谱的光电探测器在成像、气敏、夜视等领域有着广泛的应用。在此，利用无机钙钛矿结构的CsPbBr 3/GeSn异质结实现了高性能的宽带光电探测器，探测范围可覆盖450 ~ 2200 nm。异质结器件的响应度在532 nm的照明光下可以达到高达129 mA W−1，是GeSn基器件的4.92倍。由于CsPbBr 3还可以作为红外波长的抗反射涂层，因此在2200 nm波长处的红外波段响应度也可以提高1.42倍。此外，全无机组分的器件表现出良好的稳定性，在干燥环境中保存550 h后，器件仍能保持90%的原始状态。这些结果表明无机钙钛矿/GeSn异质结器件在宽带高响应光电探测方面具有巨大的潜力。
Photodetectors with broadband response spectrum have attracted great interest in many application areas such as imaging, gas sensing, and night vision. Here, a high performance broadband photodetector is demonstrated with inorganic perovskite CsPbBr3/GeSn heterojunction, detection range can be covered from 450 to 2200 nm. The responsivity of heterojunction device can achieve as high as 129 mA W−1 under illuminated light of 532 nm, which is 4.92 times larger than that of a GeSn based device. As the CsPbBr3 can also act as anti‐reflective coating for infrared wavelength, the infrared band responsivity at wavelength of 2200 nm can also be raised by 1.42 times. In addition, the device with all inorganic components is showed good stability, while keeping in the dry environment, the device can sustain its 90% original after 550 h storage. These results show the inorganic perovskite/GeSn heterojunction device is of great potential in broadband photodetection with high responsivity.
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