Survey of Materials for Nanoskiving and Influence of the Cutting Process on the Nanostructures Produced
Survey of Materials for Nanoskiving and Influence of the Cutting Process on the Nanostructures Produced
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DOI：
10.1021/am100434g
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发表时间：
2010-09-01
影响因子：
9.5
通讯作者：
Whitesides, George M.
中科院分区：
文献类型：
--
作者：
Lipomi, Darren J.;Martinez, Ramses V.;Whitesides, George M.
本文探讨了影响纳米结构的质量的因素，通过切片薄膜与超薄切片机（“nanosciving”）。它调查了不同的材料（金属，陶瓷，半导体和共轭聚合物），沉积技术（蒸发，溅射沉积，无电沉积，化学气相沉积，液相合成和旋涂）和几何形状（纳米线或二维阵列的环和新月）。然后，它将纳米结构的破碎程度与薄膜的组成、用于存款它们的方法以及用于切片的参数相关联。有四个主要结论。(i)软的和柔顺的金属（具有小于或等于钯的硬度值或500 MPa的体积硬度值的那些）的膜在切片时倾向于保持完整，而硬的和刚性的金属（具有大于或等于铂的硬度值或>= 500 MPa的硬度值的那些）倾向于破碎。(ii)所有测试的共辄聚合物形成完整的纳米结构。(iii)当切割方向垂直于嵌入膜的暴露边缘时，破碎程度最低。(iv)切割速度从0.1到8 mm/s对缺陷频率没有影响。在切片期间产生的缺陷包括来自刀中的缺陷的刻痕、膜与基质的分层和基质的压缩。测试的材料为：铝、钛、镍、铜、钯、银、铂、金、铅、铋、锗、二氧化硅（SiO2）、氧化铝（Al 2 O3）、掺锡氧化铟（ITO）、硫化铅纳米晶体、半导体聚合物聚聚（2-甲氧基-5-（2 '-乙基-己氧基）-1，4-亚苯基亚乙烯基）（MEH-PPV）（3-己基噻吩）（P3 HT）和聚（苯并咪唑苯并菲咯啉梯形）（BBL），以及导电聚合物聚（3，4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）。
This paper examines the factors that influence the quality of nanostructures fabricated by sectioning thin films with an ultramicrotome ("nanoskiving"). It surveys different materials (metals, ceramics, semiconductors, and conjugated polymers), deposition techniques (evaporation, sputter deposition, electroless deposition, chemical-vapor deposition, solution-phase synthesis, and spin-coating), and geometries (nanowires or two-dimensional arrays of rings and crescents). It then correlates the extent of fragmentation of the nanostructures with the composition of the thin films, the methods used to deposit them, and the parameters used for sectioning. There are four major conclusions. (i) Films of soft and compliant metals (those that have bulk values of hardness less than or equal to those of palladium, or 500 MPa) tend to remain intact upon sectioning, whereas hard and stiff metals (those that have values of hardness greater than or equal to those of platinum, or >= 500 MPa) tend to fragment. (ii) All conjugated polymers tested form intact nanostructures. (iii) The extent of fragmentation is lowest when the direction of cutting is perpendicular to the exposed edge of the embedded film. (iv) The speed of cutting-from 0.1 to 8 mm/s-has no effect on the frequency of defects. Defects generated during sectioning include scoring from defects in the knife, delamination of the film from the matrix, and compression of the matrix. The materials tested were: aluminum, titanium, nickel, copper, palladium, silver, platinum, gold, lead, bismuth, germanium, silicon dioxide (SiO2), alumina (Al2O3), tin-doped indium oxide (ITO), lead sulfide nanocrystals, the semiconducting polymers poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV), poly(3-hexylthiophene) (P3HT), and poly(benzimidazobenzophenanthroline ladder) (BBL), and the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS).